High voltage switching devices and process for forming same

Details High voltage switching devices and process for forming same High voltage switching devices and process for forming same

H - Electricity

01

L

H01L 29/205 (2006.01) C30B 25/02 (2006.01) C30B 29/40 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 29/778 (2006.01) H01L 29/861 (2006.01) H01L 29/868 (2006.01) H01L 29/872 (2006.01) H01L 31/0304 (2006.01) H01L 29/20 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2483403

The present invention relates to various switching device structures including Schottky diode (10), P-N diode, and P-I-N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5um) GaN layers (16) of low dopant concentration (<1E16cm-3) grown on a conductive GaN layer (14). The devices enable substantially higher breakdown voltage on hetero-epitaxial substrates (<2KV) and extremely high breakdown voltage on homo-epitaxial substrates (>2KV).

La présente invention concerne diverses structures de dispositifs de commutation comprenant une diode Schottky (10), une diode P-N et une diode P-I-N. Lesdites structures sont caractérisées par des couches GaN (16) de faible densité de défauts, de faible densité de fissures, de faible densité de creux et d'épaisseur suffisante (>2.5um), ces couches de faible concentration dopante (<1E16cm-3) croissant sur une couche GaN (14) conductrice. Ces dispositifs permettent une tension de claquage sensiblement supérieure sur des substrats hétéro-épitaxiaux (<2KV) et une tension de claquage extrêmement élevée sur des substrats homo-épitaxiaux (<2KV).

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