H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149
H01L 29/78 (2006.01) H01L 29/786 (2006.01)
Patent
CA 1227580
- 1 - ABSTRACT OF THE INVENTION A high voltage amorphous silicon thin film transistor including a gate electrode which controls the injection of charge carriers from a superimposed n+ doped amorphous silicon source electrode into an amorphous silicon charge carrier transport layer, spaced from the gate electrode by a dielectric layer, for causing current conduction through the transport layer to a laterally offset drain electrode. The source electrode is in charge injecting contact with the transport layer and the drain electrode is in collecting contact with the transport layer.
475501
Sim & Mcburney
Xerox Corporation
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