High voltage thyristor

H - Electricity – 01 – L

Patent

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356/37

H01L 29/74 (2006.01) H01L 29/06 (2006.01)

Patent

CA 1087756

ABSTRACT OF THE DISCLOSURE A thyristor structure is described which is capable of achieving the maximum theoretical breakdown voltage of both forward and reverse blocking junctions. An annular electrical field spreading member bridges the blocking junctions of the thyristor, both of which emerge on one major semiconductor surface of the device. The resistive layer spreads the electric field to a degree sufficient to raise the surface breakdown voltage up to the bulk breakdown capability.

281590

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