Highly-doped p-type contact for high-speed, front-side...

Details Highly-doped p-type contact for high-speed, front-side... Highly-doped p-type contact for high-speed, front-side...

H - Electricity

01

L

H01L 31/105 (2006.01) H01L 31/0304 (2006.01)

Patent

CA 2345153

A semiconductor p-i-n photodiode having a substrate, an n layer coupled to the surface of said substrate, an i layer coupled to the surface of said n layer, and a carbon doped p layer coupled to the surface of said i layer. preferably, the p layer (See formula ) is comprised of In0.52 A10.48 As, the i layer of In0.53 Ga0.47 As and the n layer of In0.52 A 10.48 As.

L'invention concerne une photodiode p-i-n de semiconducteur comprenant un substrat, une couche n couplée à la surface du substrat, une couche i couplée à la surface de la couche n et une couche p dopée au carbone couplée à la surface de la couche i. La couche p est est constituée, de préférence, d'InO.52 A10.48 As, la couche i est constituée d'InO.53 GaO.47 As et la couche n d'InO.52 A10.48 As.

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