Highly efficient driver circuit for a solid state switch

Details Highly efficient driver circuit for a solid state switch Highly efficient driver circuit for a solid state switch

H - Electricity

02

M

H02M 1/08 (2006.01) H02M 3/00 (2006.01) H02P 7/28 (2006.01)

Patent

CA 2380175

Systems consistent with this invention comprise a trigger circuit for triggering a silicon device having a control terminal, where the silicon device is subject to variations in the intrinsic control requirements. The trigger circuit comprises a source of direct current (DC) supply voltage, and a DC-to-DC current mode Buck converter for converting the supply voltage into an output DC current not subject to undesired variations due to variations in the supply voltage, the Buck converter supplying to the control terminal a minimum current to turn on the silicon device despite the variations in the intrinsic control requirements. The silicon device may comprise a silicon controlled rectifier (SCR) with a gate terminal, an anode terminal, and a cathode terminal, and wherein the control terminal is the gate terminal, and wherein the variations in the intrinsic control requirements are variations in the intrinsic gate-to-cathode control current and voltage requirements.

L'invention concerne des systèmes comprenant un circuit d'amorçage servant à amorcer un composant en silicium qui possède une borne de commande et est sujet à des variations des besoins de commande intrinsèques. Ce circuit d'amorçage comporte une source de tension d'alimentation en courant continu (DC) et un convertisseur continu-continu abaisseur de tension servant à convertir la tension d'alimentation en courant continu de sortie non soumis à des variations indésirables dues à des fluctuations de la tension d'alimentation, ce convertisseur abaisseur de tension alimentant la borne de commande en un courant minimum afin de mettre en service le composant en silicium indépendamment des variations des besoins de commande intrinsèques. Ce composant en silicium peut comprendre un redresseur commandé au silicium (SCR) possédant une borne de grille, une borne d'anode et une borne de cathode, la borne de commande étant constituée par la borne de grille et les variations des besoins de commande intrinsèques étant constituées par des variations des besoins intrinsèques de tension et de courant de commande de grille à cathode.

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