Highly integrated dynamic memory element

Details Highly integrated dynamic memory element Highly integrated dynamic memory element

H - Electricity

01

L

352/82.1

H01L 29/76 (2006.01) G11C 11/35 (2006.01) G11C 11/404 (2006.01) H01L 27/108 (2006.01)

Patent

CA 1131777

ABSTRACT OF THE DISCLOSURE A dynamic memory element is disclosed which is constructed on a doped semiconductor substrate. A strip-shaped semiconductor region, which is on a surface of the substrate and which is doped opposite to the substrate, is designed as a first selection line, whereas a path which is separated by means of an insulating layer from the substrate, and which runs cross-wise to the strip-shaped region, represents a second selection line. The path is separated from a substrate region which lies next to the strip-shaped region by means of a thin film region of the insulating layer. In the case of memory elements of this type, simple construction and small dimensions are desired. According to the invention, this is achieved in that inside of the strip-shaped region, an island-shaped semiconductor region doped oppo- site to the strip-shaped region is arranged and which lies close to an inter- face of the strip-shaped region separating it from the semiconductor region which lies under the thin film region. The invention is useful in digital semiconductor memories of high bit density.

336463

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