Hole trapping layer comprised of nitrogen containing...

G - Physics – 03 – C

Patent

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G03C 1/50 (2006.01) G03G 5/043 (2006.01) G03G 5/06 (2006.01)

Patent

CA 1132398

ABSTRACT OF THE DISCLOSURE Disclosed is a novel hole trapping layer and the use of this layer in an overcoated photoresponsive device, this trapping layer being comprised in one embodiment of nitrogen containing electron donating molecules containing aromatic amines selected from the group consisting of those within the following formula: Image and Image wherein Z is Ar or R, R being an aliphatic radical or a substituted aliphatic radical, and Ar is an aromatic radical or a substituted aromatic radical. This hole trapping layer can be used in an overcoated photoreceptor device comprised of a substrate, overcoated with an injecting electrode layer which in turn is overcoated with a transport layer, followed by a generating layer overcoated with the trapping layer and finally an overcoating of an insulating organic polymer. Polymeric nitrogen containing electron donat- ing molecules are also useful trapping layers.

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