Homoepitaxial growth of alpha-sic thin films and...

H - Electricity – 01 – L

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356/160, 148/2.4

H01L 21/20 (2006.01) C30B 25/02 (2006.01) C30B 29/36 (2006.01)

Patent

CA 1317857

HOMOEPITAZIAL GROWTH OF ALPHA-SIC THIN FILMS AND SEMICONDUCTOR DEVICES FABRICATED THEREON Abstract of the Disclosure Device quality monocrystalline Alpha-Sic thin films are epitaxially grown by chemical vapor deposition on Alpha-SiC [0001] substrates prepared off axis. FILM.1 .25 (8B) RSF

581144

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