Horizontal junction field-effect transistor

Details Horizontal junction field-effect transistor Horizontal junction field-effect transistor

H - Electricity

01

L

H01L 29/80 (2006.01) H01L 29/06 (2006.01) H01L 29/41 (2006.01)

Patent

CA 2689613

A transverse JFET of SiC, employing an n-type SiC substrate and comprising a channel region having carriers of high mobility, bringing a high yield is obtained. This transverse JFET comprises an n-type SiC substrate (1n), a p-type SiC film (2) formed on the right face of the n-type SiC substrate, an n-type SiC film (3), including a channel region (11), formed on the p-type SiC film, source and drain regions (22, 23) formed on the n-type SiC film separately on both sides of the channel region respectively, and a gate electrode (14) provided in contact with the n-type SiC substrate (1n).

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