Humidity sensor of capacitance change type

Details Humidity sensor of capacitance change type Humidity sensor of capacitance change type

G - Physics

01

N

324/29.6

G01N 27/22 (2006.01)

Patent

CA 1116237

ABSTRACT OF THE DISCLOSURE A device comprising a metal substrate serving as a first electrode, a dielectric oxide film formed by oxida- tion of a surface region of the substrate and a second electrode layer formed porously on the dielectric oxide film. Microscopically, the second electrode layer is only partially in contact with the dielectric oxide film. Accordingly moisture adsorbed through the second electrode layer covers uncoated regions of the dielectric film surface to a variable extent in dependence on humidity, resulting in a change in the electrostatic capacitance across the electrodes. Preferably the device comprises a semiconducting metal oxide layer as an innermost part of the second electrode layer.

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