Hybrid bipolar/field-effect power transistor in group iii-v...

Details Hybrid bipolar/field-effect power transistor in group iii-v... Hybrid bipolar/field-effect power transistor in group iii-v...

H - Electricity

01

L

H01L 29/68 (2006.01) H01L 29/73 (2006.01) H01L 29/739 (2006.01) H01L 29/808 (2006.01)

Patent

CA 2111788

HYBRID BIPOLAR/FIELD-EFFECT POWER TRANSISTOR IN GROUP III-V MATERIAL SYSTEM ABSTRACT OF THE DISCLOSURE A hybrid power transistor (40) includes a vertical PNP bipolar transistor (42) having a floating base (46). A junction-gate type field-effect transistor (FET) (62) has a lateral N-type channel (64,66) and a vertical electron injection path (54) from the channel (64,66) into the base (46) of the bipolar transistor (42). The FET channel current and thereby the electron injection current are controlled by the FET gate voltage. The injection current conductivity modulates the base (46) and thereby controls the collector current of the bipolar transistor (42). The FET (62) may have a high electron mobility transistor (HEMT), junction-gate field-effect transistor (JFET) or metal-semiconductor field-effect transistor (MESFET) structure. The FET (62) does not require a gate insulating layer, enabling fabrication of the hybrid transistor (40) in the group III-V material system.

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