Hybrid nanocomposite semiconductor material and method of...

H - Electricity – 01 – L

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H01L 51/30 (2006.01) H01L 29/12 (2006.01)

Patent

CA 2614971

Hybrid semiconductor materials have an inorganic semiconductor incorporated into a hole-conductive fluorene copolymer film. Nanometer-sized particles of the inorganic semiconductor may be prepared by mixing inorganic semiconductor precursors with a steric-hindering coordinating solvent and heating the mixture with microwaves to a temperature below the boiling point of the solvent.

L'invention concerne des matériaux à semi-conducteurs hybrides comprenant un semi-conducteur inorganique incorporé dans un film de copolymère de fluorène conducteur. Des particules de dimension nanométrique du semi-conducteur inorganique peuvent être obtenues par mélange de précurseurs du semi-conducteur inorganique avec un solvant de coordination de blocage stérique, et par réchauffement du mélange par micro-ondes à une température inférieure au point d'ébullition du solvant.

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