Hybrid process for sbd metallurgies

Details Hybrid process for sbd metallurgies Hybrid process for sbd metallurgies

H - Electricity

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149/10, 96/256

H01L 21/283 (2006.01) H01L 21/027 (2006.01) H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 21/338 (2006.01) H01L 23/485 (2006.01)

Patent

CA 1126629

Abstract A method for forming thin film patterns in the fabrication of integrated circuits utilizing a lift-off mask in an inverse vertical relationship with the desired metal film. The method involves the preliminary blanket deposition of the metal in-point, followed by a coating of a patterned lift-off mask over which is blanket coated a dry- etch resistant material with subsequent removal of the lift-off mask, and dry etching of the exposed metal film. In one embodiment the dry-etch mask can comprise a diverse metal layer when a dry-etch ambient is employed which is passive to the d;- verse metal. In another embodiment, where dry etch ambients are employed which are corrosive to the diverse metal which is desired in the final structure, it can be covered with a blanket layer of any convenient dry-etch resistant material, such as magnesium oxide, prior to removal of the lift-off mask. This method has effective appli- cation in the fabrication of Schottky barrier diodes, transistors, and other electronic compon- ents or discrete and integrated devices requiring high quality metal to semiconductor junctions or interfaces.

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