Hydrogen heat treatment method of silicon wafers using a...

C - Chemistry – Metallurgy – 30 – B

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C30B 33/02 (2006.01) H01L 21/322 (2006.01) H01L 21/324 (2006.01)

Patent

CA 2194653

A heat treatment is performed in a hydrogen-gas containing atmosphere. A high-purity inert gas having a water content of not more than 2.57 ppm is used as a substitution gas for replacing a wafer-input air atmosphere and for replacing the hydrogen-gas containing atmosphere after the heat treatment.

Un traitement thermique est réalisé dans une atmosphère contenant de l'hydrogène gazeux. Un gaz inerte de pureté élevée ayant une teneur en eau n'excédant pas 2,57 ppm est utilisé comme gaz de substitution pour remplacer l'atmosphère d'air au moment de l'introduction des tranches dans le four et pour remplacer l'atmosphère contenant de l'hydrogène gazeux après le traitement thermique.

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