Hydrogen ion microlithography

Details Hydrogen ion microlithography Hydrogen ion microlithography

G - Physics

03

C

356/147, 345/22

G03C 5/00 (2006.01) G03F 7/004 (2006.01) G03F 7/20 (2006.01)

Patent

CA 1310734

ABSTRACT Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

603682

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