Hydrogen plasma passivation of gaas

Details Hydrogen plasma passivation of gaas Hydrogen plasma passivation of gaas

H - Electricity

01

L

148/3.4

H01L 21/306 (2006.01) C30B 33/12 (2006.01) H01L 21/326 (2006.01)

Patent

CA 2024134

Abstract of the Disclosure Hydrogen Plasma surface passivation of III-V Semiconductors is critically dependent on exposure time and pressure because of competition between plasma passivation and damage. Proper control of pressure according to the invention yields reproducible and stable passivation. Improved passivation is obtained using high pressure hydrogen plasmas, i.e. above 1 Torr. - 8 -

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