Hydrogen sulfide injection method for phosphor deposition

C - Chemistry – Metallurgy – 23 – C

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C23C 14/06 (2006.01) C23C 14/00 (2006.01) C23C 14/22 (2006.01)

Patent

CA 2528839

The invention is a method of vacuum evaporation of a multi-element sulfur bearing thin film compositions onto a substrate. The method comprises targeting a source of gas or vapour sulfur species at one or more source materials that make up at least part of the thin film composition during evaporation of the source materials. The sulfur species is heated to a high temperature as it reaches the one or more source materials and there is a chemical interaction of the sulfur species with evaporant from the one or more source materials during deposition of said thin film composition. The method is particularly useful for the deposition of phosphors for full colour ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.

Cette invention concerne un procédé d'évaporation sous vide, sur un substrat, de compostions à film mince porteuses de soufre multi-élément. Le procédé consiste à diriger une source de gaz ou d'une espèce de soufre à l'état de vapeur qui constitue au moins une partie de la composition à film mince sur un ou plusieurs matériaux sources pendant l'évaporation de ces matériaux sources. L'espèce de soufre est portée à haute température lorsqu'elle atteint le ou les matériaux sources et entre en interaction chimique avec le produit d'évaporation du ou des matériaux sources pendant le dépôt de ladite composition à film mince. Ce procédé convient tout particulièrement pour le dépôt de phosphores dans le cas d'affichages électroluminescents AC pleine couleur faisant appel à des couches diélectriques en film mince à constante diélectrique élevée.

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