H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/00 (2006.01) B81B 3/00 (2006.01) B81C 1/00 (2006.01)
Patent
CA 2364498
A combined IC/Mems process forms the IC parts first, and then forms the MEMS parts (110). One option forms a parylene overlayer, then forms a cavity under the parylene overlayer.
L'invention concerne un procédé combiné circuit intégré/systèmes micro-électromécaniques consistant à former d'abord la partie circuit intégré, puis la partie systèmes micro-électromécaniques (110). On peut éventuellement former une couche supérieure de parylène, puis une cavité sous la couche supérieure de parylène.
Han Zhigang
Jiang Fukang
Tai Yu-Chong
Wang Xuan-Qi
California Institute Of Technology
Smart & Biggar
LandOfFree
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