Iii-v quaternary alloy photodiode

Details Iii-v quaternary alloy photodiode Iii-v quaternary alloy photodiode

H - Electricity

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H01L 31/10 (2006.01) H01L 31/0304 (2006.01) H01L 31/107 (2006.01) H01L 31/109 (2006.01) H01L 31/11 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1149497

RCA 73,182 III-V QUATERNARY ALLOY PHOTODIODE Abstract A III-V quaternary alloy photodiode comprises an n-type III-V binary alloy body; a III-V quaternary alloy layer chosen to have about the same lattice constant as that of said body grown on a major surface of said body; an electrically insulating layer grown on said quaternary alloy layer and having an opening therein extending through said second layer; a p-type layer of the same III-V binary alloy as said body, grown on said quaternary alloy layer in the area contiguous with the opening in said electrically insulating layer; a p-type region in said quaternary alloy layer in the region contiguous with the opening in said electrically insulating layer; and electrically conducting layers overlying a portion of said p-type binary alloy layer and of a second major surface of said body to provide electrical contact to the photodiode. The III-V quaternary alloy layer may be of n-type conductivity, electrically insulating, or have n-type and electrically insulating regions.

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