Iii-v semiconductor growth initiation on silicon

Details Iii-v semiconductor growth initiation on silicon Iii-v semiconductor growth initiation on silicon

H - Electricity

01

L

148/2.4, 148/3.8

H01L 21/205 (2006.01) C30B 25/02 (2006.01) C30B 29/40 (2006.01) H01L 21/20 (2006.01)

Patent

CA 1332141

III-V SEMICONDUCTOR GROWTH INITIATION ON SILICON Abstract of the Disclosure A GaAs containing nucleation layer is deposited upon Si, Ge/Si, or other single crystal substrate from triethyl gallium (TEG). Deposition from TEG allows a lower deposition temperature which provides a low level of substrate contamination and improved surface morphology.

582970

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