Image sensor having four-transistor or five-transistor...

Details Image sensor having four-transistor or five-transistor... Image sensor having four-transistor or five-transistor...

H - Electricity

01

L

H01L 27/146 (2006.01) H04N 3/15 (2006.01)

Patent

CA 2706282

The invention relates to image sensors produced with CMOS technology, whose individual pixels, arranged in an array of rows and columns, each consist of a photodiode (PD1) associated with a charge storage region (N2) which receives the photogenerated charge before a charge readout phase. To eliminate the risk of introducing kTC-type noise into the signal, during the reset of the storage zone (N2) at the end of a readout cycle, the invention proposes that the storage zone be divided into two parts one of which (N2b), adjacent to the reset gate (G3), is covered by a diffused region (P2) of the same type of conductivity as the substrate in which the photodiode is formed, this region being brought to the fixed potential of the substrate, and the other (N2a) of which is not covered by such a region and is not adjacent to the reset gate.

L'invention concerne les capteurs d'image réalisés en technologie CMOS, dont les pixels individuels, agencés en réseau de lignes et de colonnes, sont constitués chacun par une photodiode (PD1) associée à une région de stockage de charges (N2) qui reçoit les charges photogénérées avant une phase de lecture de charges. Pour éliminer le risque d'introduction d'un bruit de type kTC dans le signal, lors de la réinitialisation de la zone de stockage (N2) à la fin d'un cycle de lecture, l'invention propose de diviser la zone de stockage en deux parties dont l'une (N2b), adjacente à la grille de réinitialisation (G3), est recouverte d'une région diffusée (P2) de même type de conductivité que le substrat dans lequel est formée la photodiode, cette région étant portée au potentiel fixe du substrat, et l'autre (N2a) n'est pas recouverte par une telle région et n'est pas adjacente à la grille de réinitialisation.

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