H - Electricity – 04 – N
Patent
H - Electricity
04
N
H04N 5/341 (2011.01) H04N 5/357 (2011.01) H01L 27/148 (2006.01)
Patent
CA 2519710
The invention relates to an image sensor comprising an image sensor matrix having N lines and K columns of image points and a read out register (RL) which is disposed at the free end of the K columns. In order to improve the matrix read speed, the invention consists in continuing the horizontal transfer (switching of phases phiL1, phiL2) into the read out register even while the vertical offset signals continue from one line to the next, without continuing the horizontal transfer during the opening of the transfer port (TR) between columns and horizontal register. In this way, the time taken to empty the horizontal read register encroaches on the time reserved for each vertical transfer step, instead of said times being added. The time gain is repeated on each line and said gain increases as the number of lines increases. The invention also comprises means which are provided in order to limit the influence of the column transfer switches on the reading of the output charges from the read out register.
L'invention propose un capteur d'image comprenant une matrice de prise de vue ayant N lignes et K colonnes de points d'image, un registre de lecture (RL) à l'extrémité libre des K colonnes. Pour améliorer la rapidité de lecture de la matrice, l'invention propose de poursuivre le transfert horizontal (commutation de phases phil-1, phil~2) dans le registre de lecture même pendant que les signaux (phil, phi2, phi3, phi4) de décalage verticaux d'une ligne à l'autre se poursuivent, sans cependant poursuivre le transfert horizontal pendant l'ouverture de la porte de transfert (TR) entre colonnes et registre horizontal. Le temps de vidage du registre de lecture horizontal empiète donc sur le temps réservé àchaque étape de transfert vertical, au lieu que ces temps soient additionnés. Le gain de temps se répète à chaque ligne, ce qui est d'autant plus significatif que le nombre de lignes est plus élevé. Des moyens sont prévus pour limiter l'influence des commutations de transfert en colonne sur la lecture des charges en sortie du registre de lecture.
Fereyre Pierre
Ligozat Thierry
Atmel Grenoble
E2v Semiconductors
Marks & Clerk
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