Imager having improved thin film transistor and...

H - Electricity – 01 – L

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H01L 27/146 (2006.01)

Patent

CA 2048785

RD-19,885 AN IMAGER HAVING IMPROVED THIN FILM TRANSISTOR AND PHOTOSENSITIVE DEVICE STRUCTURES Abstract of the Disclosure An improved structure for a thin film transistor photodiode photosensitive array retains the semiconductor material of the thin film transistor layer under the entire area occupied by the photosensitive device for each pixel of the array. This eliminates a step in the layer on which the source metallization of the thin film transistor is disposed and results in more reliable passivation of that layer and thereby increases yield and reduces cost. Several improved processes may be employed for the fabrication of such a thin film transistor photodiode photosensitive array.

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