H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/1, 350/40, 3
H01L 29/68 (2006.01) H01L 27/148 (2006.01) H01L 29/768 (2006.01)
Patent
CA 1289241
Abstract A charge-coupled device comprises a substrate of semiconductor material having at least two buried channels formed therein. At least two sets of clock electrodes overlie the buried channels. By appli- cation of appropriate potentials to the clock elec- trodes, an electrical charge may be propagated in controlled fashion along each buried channel to- wards its output end. A floating diffusion is formed at the output end of each buried channel for receiving charge propagated along the channel. Output transistors are associated with the buried channels respectively and each has a control elec- trode connected to the floating diffusion of the associated channel. An output diffusion is located between the floating diffusions and the control electrodes of the transistors and extends perpen- dicular to the channels. A reset gate is as- sociated with each channel and lies over the sub- strate between the floating diffusion of the as- sociated channel and the output diffusion, so that by application of a predetermined potential to the reset gate a conductive channel is formed in the substrate between the floating diffusion of the associated channel and the output diffusion. A reset bus extends over the substrate on the op- posite side of the floating diffusions from the reset gate and has a bus extension which extends over the substrate between the floating diffusions and is connected to the reset gates.
577211
Heidtmann Denis L.
Riley Larry D.
Heidtmann Denis L.
Kirby Eades Gale Baker
Riley Larry D.
Scientific Imaging Technologies Inc.
Tektronix Inc.
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