Impact sound stressing for semiconductor devices

Details Impact sound stressing for semiconductor devices Impact sound stressing for semiconductor devices

H - Electricity

01

L

356/116, 356/149

H01L 21/30 (2006.01)

Patent

CA 1066816

ABSTRACT OF THE DISCLOSURE Methods of making semiconductor devices using the technique of impact sound stressing are disclosed. Impact sound stressing (ISS) is a mechanical acoustical technique to damage, in a known and controlled manner. semi- conductor wafers. Wafers are subjected to ISS on the backsides before semi- conductor processing steps. The application of ISS before the first high temperature application with control the generation and subsequent direction of flow (gradient) of vacancies (interstitials) generated through all device high temperature processing steps including ion implantation. ISS redirects the flow of vacancies/interstitials into the backside away from the device area of the wafer. Thus, the device area is swept clean in a gettering action of vacancy/interstitials and their complexes which are detrimental to device performance. The techniques of impact sound stressing finds application in improvement the performance of all semiconductor devices, specifically dynamic memories, bipolars, solar cells and power devices.

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