Impatt diode production

Details Impatt diode production Impatt diode production

H - Electricity

01

L

356/53

H01L 21/30 (2006.01) C30B 35/00 (2006.01) H01L 21/76 (2006.01) H01L 21/78 (2006.01) H01L 29/864 (2006.01)

Patent

CA 1055617

ABSTRACT In the production of an IMPATT diode a slice of semiconductor material having an epitaxial layer on an n+ substrate material is selected. A p+ layer is diffused into the epitaxial layer to form an abrupt p+-n junction. The diffused surface of the substrate is metallized with thin layers of titanium, platinum and gold in succession. A relatively thick layer of gold is deposited by electroplating on to the gold layer. The n+ plus substrate material is thinned to a desired thickness for the device. A photolithographic mask is produced on the n+ plus surface of the substrate. A succession of thin layers of titanium, platinum and gold are depoisted through areas defined by the photolithographic mask. A thick gold layer is electroplated on to the thin gold layer and the photolithographic mask is removed so as to expose the surface of the n+ plus substrate material around a series of gold pads. The zones of semiconductor material are passivated by high energy proton bombardment in depth through slice to create zones of semi-insulating material to isolate the semiconductor material directly below the gold pads. The processed semiconductor material is mounted on a heat sink and one or more of the gold pads are connected to a connection block.

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