Implantation and electrical activation of dopants into...

Details Implantation and electrical activation of dopants into... Implantation and electrical activation of dopants into...

H - Electricity

01

L

356/147, 356/176

H01L 21/265 (2006.01) C30B 31/22 (2006.01)

Patent

CA 1332142

Abstract The invention is a method of ion implantation of dopant ions into a substrate of silicon carbide. In the method, the implantation takes place at elevated temperatures, following which the substrate may be oxidized or annealed.

581148

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