Impregnation of aluminum interconnects with copper

Details Impregnation of aluminum interconnects with copper Impregnation of aluminum interconnects with copper

C - Chemistry, Metallurgy

23

C

356/12, 204/96.0

C23C 14/16 (2006.01) H01L 21/285 (2006.01) H01L 21/3205 (2006.01) H01L 21/3213 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1229816

IMPREGNATION OF ALUMINUM INTERCONNECTS WITH COPPER ABSTRACT OF THE DISCLOSURE A method for impregnating copper into aluminum interconnect lines on a semiconductor device is dis- closed. In a first embodiment, an interconnect pattern is formed on an aluminum layer by etching while the aluminum is substantially free from copper, and the copper is thereafter introduced to the formed intercon- nect lines. In a second embodiment, copper is intro- duced to the aluminum layer prior to formation of the desired interconnect pattern. The copper-rich layer is removed from the areas to be etched prior to etching. The method facilitates chlorine plasma etching of the aluminum which is inhibited by the presence of copper. The method is also useful with various wet etching processes where the formation of a copper-rich layer is found to stabilize the aluminum layer during subsequent processing.

455919

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