Improved back contact in thin film solar cells

H - Electricity – 01 – L

Patent

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Details

H01L 31/042 (2006.01) H01L 31/0296 (2006.01)

Patent

CA 2716687

The present invention discloses thin film photovoltaic devices comprising Group II- VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II- VI semiconductor lay-ers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.

La présente invention porte sur des dispositifs photovoltaïques à film mince comprenant des couches semi-conductrices du Groupe II-VI avec une configuration de substrat ayant une couche d'interface entre la contre-électrode et la couche absorbante capable de créer un contact ohmique dans le dispositif. La présente invention porte également sur des dispositifs photovoltaïques à film mince comprenant des couches semi-conductrices du Groupe II-VI avec une configuration de superstrat ayant une couche d'interface entre la contre-électrode et la couche absorbante capable de créer un contact ohmique dans le dispositif, la couche d'interface comprenant des nanoparticules ou des nanoparticules qui sont frittées.

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