Improved buffer for growth of gan on sapphire

Details Improved buffer for growth of gan on sapphire Improved buffer for growth of gan on sapphire

H - Electricity

01

L

H01L 33/12 (2010.01) H01L 33/32 (2010.01)

Patent

CA 2412419

A GaN based three layer buffer (11) on a sapphire substrate (101) provides a template for growth of a high quality I GaN layer (105) as a substrate for growth of a Nitride based LED.

L'invention concerne un tampon à trois couches (11), à base de GaN, placé sur un substrat de saphir (101), ce tampon constituant une matrice servant à la croissance d'une couche de nitrure d'indium-gallium de grande qualité (105), en tant que substrat de remplacement destiné à la croissance d'une diode électroluminescente à base de nitrure.

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