Improved deposition rate plasma enhanced chemical vapor process

Details Improved deposition rate plasma enhanced chemical vapor process Improved deposition rate plasma enhanced chemical vapor process

C - Chemistry, Metallurgy

23

C

C23C 16/40 (2006.01) B05D 7/24 (2006.01) C23C 16/30 (2006.01)

Patent

CA 2582302

A process for depositing a layer of a plasma polymerized organosiloxane, siloxane or silicon oxide onto the surface of an organic polymeric substrate by atmospheric pressure glow discharge deposition from a gaseous mixture comprising a silicon containing compound and an oxidant, characterized in that the oxidant comprises N2O.

La présente invention a pour objet un procédé de dépôt d~une couche d'organosiloxane, de siloxane ou d~oxyde de silicium polymérisés par plasma sur la surface d~un substrat polymère organique. Ledit procédé emploie une méthode de dépôt par décharge luminescente à pression atmosphérique, dans un mélange gazeux comprenant un dérivé de silicium et un oxydant incluant N2O.

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