Improved dilute nitride devices

Details Improved dilute nitride devices Improved dilute nitride devices

H - Electricity

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H01L 29/20 (2006.01) H01L 33/32 (2010.01) H01L 33/46 (2010.01) H01L 21/20 (2006.01) H01L 23/40 (2006.01) H01L 23/48 (2006.01) H01L 31/0304 (2006.01) H01L 31/18 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2639902

Dilute nitride devices and methods of fabricating dilute nitride devices are disclosed. The dilute nitride device has a GaP substrate formed using the vertical gradient freeze technique over which is formed a lattice-matched, substantially lattice--matched or pseudomorphic dilute nitride-containing material. Such devices may include, for example, solar cells, photodetectors, or light emitting devices.

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