H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 33/32 (2010.01)
Patent
CA 2414725
A GaN based LED comprises: a three layer buffer (11) which is a template for growth of a high quality I GaN platform for quality growth of subsequent layers; a light emitting structure (12); and complementary N and P electrode structures (115, 113) which spread current flowing between the electrodes fully across the light emitting structure (12).
La présente invention concerne une DEL à base de GaN comprenant: un tampon à trois couches qui est un élément de référence pour la croissance d'une plate-forme haute qualité I GaN permettant une bonne croissance des couches suivantes; une structure d'émission lumineuse; et des structures d'électrode complémentaires N et P qui produisent un courant circulant entre les électrodes en traversant complètement la structure d'émission lumineuse.
Chen John
Liang Bingwen
Shih Robert
American Xtal Technology Inc.
Dalian Meiming Epitaxy Technology Co. Ltd.
Gowling Lafleur Henderson Llp
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