Improved gan light emitting diode

H - Electricity – 01 – L

Patent

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H01L 33/32 (2010.01)

Patent

CA 2414725

A GaN based LED comprises: a three layer buffer (11) which is a template for growth of a high quality I GaN platform for quality growth of subsequent layers; a light emitting structure (12); and complementary N and P electrode structures (115, 113) which spread current flowing between the electrodes fully across the light emitting structure (12).

La présente invention concerne une DEL à base de GaN comprenant: un tampon à trois couches qui est un élément de référence pour la croissance d'une plate-forme haute qualité I GaN permettant une bonne croissance des couches suivantes; une structure d'émission lumineuse; et des structures d'électrode complémentaires N et P qui produisent un courant circulant entre les électrodes en traversant complètement la structure d'émission lumineuse.

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