Improved optoelectronic device

Details Improved optoelectronic device Improved optoelectronic device

H - Electricity

01

L

H01L 29/88 (2006.01) G02F 1/017 (2006.01) G02F 1/025 (2006.01) H01L 31/0352 (2006.01) G02F 1/015 (2006.01)

Patent

CA 2398287

There is disclosed an optoelectronic device (5) at least partially made from a quaternary III - V semiconductor alloy, the device (5) including at least one resonant tunnelling diode (RTD) (12). In a preferred embodiment the quaternary alloy is Indium Gallium Aluminium Arsenide (InGaAlAs). There is also disclosed an optical modulator (10) for modulation of electro-magnetic radiation in the wavelength region 1000 to 1600 nm, wherein the modulator (10) includes an RTD (12) for modulating the radiation.

L'invention cocnerne un dispositif optoélectronique (5) au moins partiellement fabriqué à partir d'un alliage quaternaire semi-conducteur de type III-V. Ledit dispositif (5) comprend au moins une diode à tunnel de résonance (RTD)(12). Dans un mode de réalisation préféré, l'alliage quaternaire (12) est un alliage Gallium Aluminium Arséniure (InGaAlAs). L'invention porte également sur un modulateur optique (10) pour la modulation du rayonnement électromagnétique dans une zone de longueur d'onde comprise entre 1 000 et 1 600 nm, qui (10) comprend une RTD (12) pour la modulation du rayonnement.

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