Improved process for cleaning a surface of thin film of...

C - Chemistry – Metallurgy – 23 – C

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C23C 16/40 (2006.01) B08B 7/00 (2006.01) C23C 14/08 (2006.01) G03F 7/36 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2064362

A process for removing contaminants from a surface of a thin film of oxide superconductor deposited on a substrate. The thin film of oxide superconductor is heat-treated in ultra-high vacuum at a temperature which is within a range of - 100 °C to + 100 °C of the temperature at which oxygen enter into the oxide superconductor. The process is used for removing photo-resist from a surface of thin film of oxide superconductor and for producing a layered structure containing at least one thin film of oxide superconductor such as Y1Ba2Cu3O7-x having a contaminated surface. On the cleaned surface, another thin film of oxide superconductor or non-superconductor is deposited. The resulting structure of layered thin films is used for fabricating superconducting transistor, Josephson junctions, superconducting circuits or the like.

Cette invention concerne un procédé de nettoyage de la surface d'une couche mince d'oxyde supraconducteur déposée sur un substrat. Cette couche mince est soumise à une traitement thermique sous vide poussé à une température comprise dans une plage de ± 100 degrés Celsius centrée sur la température de l'oxygène entrant dans l'oxyde supraconducteur. Le traitement sert à enlever de la résine photosensible de la surface de la couche mince d'oxyde supraconducteur et à constituer une structure multi-couche renfermant au moins une couche mince d'oxyde supraconducteur tel que Y1Ba2Cu3O7-x présentant une surface contaminée. Sur la surface nettoyée, une autre couche mince d'oxyde supraconducteur ou non supraconducteur est déposée. La structure résultante formée de couches minces multiples sert à la fabrication de transistors supraconducteurs, de jonctions Josephson, de circuits supraconducteurs et autres éléments analogues.

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