Improved process for preparing a layered structure...

Details Improved process for preparing a layered structure... Improved process for preparing a layered structure...

C - Chemistry, Metallurgy

23

C

C23C 16/40 (2006.01) B08B 7/00 (2006.01) C23C 14/08 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2064273

A process for producing a layered structure containing at least one thin film of oxide superconductor (I) such as Y1Ba2Cu3O7-x having a contaminated surface on a substrate (3). The contaminated surface of the thin film of oxide superconductor is heat-treated in an atmosphere containing oxygen of high purity of higher than 5N and a partial pressure of 25 Torr at a temperature of 350 to 700 °C. On the thin film of oxide superconductor (1), another thin film (2) of oxide superconductor or non-superconductor is deposited. The resulting structure of layered thin films is used for fabricating superconducting transistor, Josephson junctions, superconducting circuits or the like.

Cette invention concerne un procédé de fabrication d'une structure multi-couche comprenant au moins une couche mince d'oxyde supraconducteur (I), tel que Y1Ba2Cu3O7-x, déposée sur un substrat (3) et ayant une surface contaminée. Cette surface de la couche mince d'oxyde supraconducteur est soumise à un traitement thermique sous pression partielle de 25 torr, dans une atmosphère renfermant de l'oxygène d'une pureté supérieure à 5N et à une température comprise entre 350 et 700 degrés Celsius. Sur la couche mince d'oxyde supraconducteur (1) est déposée une autre couche mince (2) d'oxyde supraconducteur ou non supraconducteur. La structure résultante formée de couches minces multiples sert à la fabrication de transistors supraconducteurs, de jonctions Josephson, de circuits supraconducteurs et autres éléments analogues.

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