Improved rf transistor amplifier linearity using suppressed...

H - Electricity – 03 – F

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H03F 3/68 (2006.01) H03F 1/32 (2006.01) H03F 3/21 (2006.01) H03F 3/60 (2006.01)

Patent

CA 2504979

The linearity of a transistor amplifier comprising a plurality of transistors operating parallel is improved by reducing the odd order transconductance derivatives of signals generated by the transistors. The transistors can be provided in groups with each group having a different bias voltage applied thereto or each group of transistors can have a different input signal applied thereto. The groups of transistors can have different physical parameters suchas the width to length ratio of gates in field effect transistors and threshold voltages for the transistors.

Selon l'invention, la linéarité d'un amplificateur à transistors comprenant une pluralité de transistors fonctionnant en parallèle est améliorée par réduction des dérivés de transconductance d'ordre impair de signaux générés par les transistors. Les transistors peuvent se présenter en groupes dont la tension de polarisation est différente pour chaque groupe ou dont le signal d'entrée est différent pour chaque groupe. Les groupes de transistors peuvent présenter différents paramètres physiques tels que le rapport largeur-longueur de portes dans des transistors à effet de champ et des tensions de seuil pour les transistors.

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