Improved semiconductor bride explosive device

Details Improved semiconductor bride explosive device Improved semiconductor bride explosive device

F - Mech Eng,Light,Heat,Weapons

42

C

F42C 19/12 (2006.01) F42B 3/13 (2006.01)

Patent

CA 2156190

This invention discloses a method of fabricating an electroexplosive, device which utilizes a semiconductor bridge (292) as an ignition element. The semiconductor bridge (292) is electrically connected to a metal header (100) by a small, low resistance contact to the extension of bridge material and through an insulating silicon substrate (270) to a eutectic bond (260) created by gold plating (350) on the metal header (100) and the silicon. The second electrode (360) of the bridge circuit is connected via wire bonds (130) to one or two conducting pins (110) which penetrate the metal header (100) and are insulated by surrounding glass (120). The design allows the use of standard semiconductor assembly methods. Since small pads of electrical material are used for electrical contact, the die size is small. A redundant connection via two conducting pins (110) insulated from the header (100) to one electrode (360) of the semiconductor bridge allows a post assembly test of the integrity of the wire bonds.

Affiliated with

Also associated with

Rating

Improved semiconductor bride explosive device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Improved semiconductor bride explosive device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Improved semiconductor bride explosive device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1935848