Improved semiconductor laser

Details Improved semiconductor laser Improved semiconductor laser

H - Electricity

01

S

H01S 5/00 (2006.01) H01S 5/06 (2006.01) H01S 5/10 (2006.01)

Patent

CA 2326280

The first present invention provides a semiconductor laser having at least a cavity, wherein the cavity satisfies the following equation: L = A + BXIn (1/Rf) where A and B are first and second constants, and L is a length of the cavity, and Rf is a reflectance factor of a front facet of the cavity.

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