Improved silicon thin film deposition for photovoltaic...

H - Electricity – 01 – L

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H01L 21/20 (2006.01) C03C 17/10 (2006.01) H01L 21/36 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2758074

The present invention provides for cost-efficient methods for on-line deposition of semi-conducting metallic layers. More specifically, the present invention provides on-line pyrolytic deposition methods for deposition of p-type, n-type and i--type semi-conducting metallic layers in the float glass production process. Furthermore, the present invention provides for on-line pyrolytic deposition methods for production of single-, double-, triple- and multi- junction p-(i-)n and n-(i-)p type semi-conducting metal layers. Such p-type, n-type and i-type semi-conducting metal layers are useful in the photovoltaic industry and attractive to manufacturers of photovoltaic modules as "value-added" products.

La présente invention porte sur des procédés rentables de dépôt en ligne de couches métalliques semi-conductrices. Plus spécifiquement, la présente invention porte sur des procédés de dépôt pyrolytique en ligne pour le dépôt de couches métalliques semi-conductrices de type p, de type n et de type i dans les processus de production de verre flotté. En outre, la présente invention porte sur des procédés de dépôt pyrolytique en ligne pour la production de couches métalliques semi-conductrices de type p-(i-)n et n-(i-)p à jonction simple, double, triple et multiple. Ces couches métalliques semi-conductrices de type p, de type n et de type i sont utiles dans l'industrie photovoltaïque et intéressantes pour des fabricants de modules photovoltaïques en tant que produits « à valeur ajoutée. »

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