Impurity band conduction semiconductor devices

Details Impurity band conduction semiconductor devices Impurity band conduction semiconductor devices

H - Electricity

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H01L 31/02 (2006.01) H01L 29/36 (2006.01) H01L 29/76 (2006.01) H01L 29/861 (2006.01) H01L 31/068 (2006.01) H01L 31/105 (2006.01) H01L 31/11 (2006.01)

Patent

CA 1243388

ABSTRACT A semiconductor diode is designed to operate at a temperature where the thermal generation of free charge carriers is negliglble. The diode includes a first semiconducting layer with a sufficient concentration of first conductivity type impurities to exhibit metallic type conductivity, a second semiconducting layer with a sufficient first conductivity type concentration to create an impurity energy band and with a second conduc- tivity type impurity concentration less than half the first, and a blocking layer between the first and second layers with a sufficiently low impurity concentration that substantially no charge transport can occur by an im- purity conduction mechanism. First and second ohmic contacts are deposited on the first and second layers opposite the blocking layer. The same types of layers are used to construct transistors.

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