Impurity doping method with diffusion source

Details Impurity doping method with diffusion source Impurity doping method with diffusion source

C - Chemistry, Metallurgy

30

B

148/3

C30B 31/02 (2006.01) C30B 31/06 (2006.01) H01L 21/225 (2006.01)

Patent

CA 2021993

According to the inventive new method of doping impurity, a chemically active semiconductor surface is covered with an adsorption layer composed of impurity element which forms a dopant in the semiconductor or composed of compound containing the impurity element. Thereafter, solid phase diffusion is effected with using the adsorption layer as an impurity diffusion source so as to form an impurity-doped region having a desired density profile in the depth direction.

Affiliated with

Also associated with

Rating

Impurity doping method with diffusion source does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Impurity doping method with diffusion source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Impurity doping method with diffusion source will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1616763