In situ removal of contaminants from the interior surfaces...

H - Electricity – 01 – J

Patent

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H01J 37/317 (2006.01) H01J 37/30 (2006.01)

Patent

CA 2177872

An in situ method of removing contaminant material adhering to interiorsurfaces of an ion beam implanter (10) is disclosed. The method includes the steps of: extracting ions from source materials and forming the ions into an ion beam (14) that traverses a beam path through an evacuated region to an ion implantation chamber (17); providing a control means (11) for controlling a trajectory of the ion beam within the evacuated region; utilizing the control means to direct the ion beam to strike interior surfaces of the ion beam implanter in contact with the evacuated region to dislodge the contaminant material; and removing the contaminant material from the evacuated region of the implanter.

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