Inassb light emitting diodes

Details Inassb light emitting diodes Inassb light emitting diodes

H - Electricity

01

L

H01L 33/00 (2006.01)

Patent

CA 2114284

InAsSb Light Emitting Diodes A b s t r a c t A light emitting diode characterized by a doped p-n junction grown on a semiconductor substrate, said doped p-n junction consisting of a bulk InAs1-xSbx layer doped with beryllium as p-doping element and silicum as n-doping element, wherein the compositional parameter x is set to a value comprised in the range from 0 to 1 thereby to define the wavelength of the emitted light when the structure is activated.

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