Indium antimonide (insb) photodetector device and structure...

H - Electricity – 01 – L

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H01L 31/0216 (2006.01) H01L 31/0304 (2006.01) H01L 31/103 (2006.01)

Patent

CA 2141034

The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all native oxides of indium and antimony therefrom. A passivation layer (26) is then formed on the surface (22) of a material such as silicon dioxide, silicon suboxide and/or silicon nitride which does not react With InSb to form a structure which would have carrier traps therein and cause flashing. The device (10) is capable of detecting radiation over a continuous spectral range including the infrared, visible and ultraviolet regions.

La surface (22) envers ou photoréceptrice du substrat (12) d'un dispositif photodétecteur (10) à l'antimoniure d'indium (InSb) est nettoyée de manière à éliminer tous les oxydes natifs d'indium et d'antimoine dudit substrat. Une couche de passivation (26) est ensuite formée sur la surface (22) d'un matériau tel que du dioxyde de silicium, du sous-oxyde de silicium et/ou du nitrure de silicium qui ne réagit pas avec InSb pour former une structure qui comporterait des pièges de porteurs et provoquerait la formation d'un arc. Ledit dispositif (10) est capable de détecter des rayonnements sur une plage spectrale continue comprenant les domaines de l'infrarouge, du visible et de l'ultraviolet.

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