Indium arsenide magnetoresistor

Details Indium arsenide magnetoresistor Indium arsenide magnetoresistor

H - Electricity

01

L

356/94

H01L 43/08 (2006.01)

Patent

CA 1297999

C-4978 INDIUM ARSENIDE MAGNETORESISTOR Abstract of the Disclosure A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film i described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thickness below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can has a very noticeable effect. A method for making the sensor is also described. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the indium arsenide, and an actual increase in magnetic sensitivity and temperature insensitivity.

604137

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