H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/176, 148/2.9
H01L 21/265 (2006.01) C30B 31/22 (2006.01) H01L 21/324 (2006.01) H01L 29/10 (2006.01) H01L 29/207 (2006.01)
Patent
CA 1332696
- 14 - INDIUM PHOSPHIDE DEVICES Abstract Epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers make excellent substrates for III-V semiconductor devices. Particularly appealing is the low defect density obtained because of the conducting InP wafers and excellent insulating characteristics of the semi- insulating InP layer. The invention is a procedure for doping the insulating layer by ion implantation. Such a procedure is unusually advantageous for fabricating a variety of devices including MISFETs, MESFETs and JFETs.
537177
Johnston Wilbur Dexter Jr.
Long Judith Ann
Macrander Albert Tiemen
Schwartz Bertram
Singh Shobha
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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