Individual bit line recovery circuits

Details Individual bit line recovery circuits Individual bit line recovery circuits

G - Physics

11

C

G11C 7/00 (2006.01) G11C 7/12 (2006.01) G11C 11/41 (2006.01) G11C 11/419 (2006.01)

Patent

CA 2043928

8332-246 / NS1527 INDIVIDUAL BIT LINE RECOVERY CIRCUITS ABSTRACT OF THE DISCLOSURE A bipolar recovery circuit for a static random access memory cell is described. The circuit corrects reverse emitter-base breakdown which occurs in the known common base node writing recovery circuits. The circuit is simple, requiring little silicon chip area to fabricate. In a preferred embodiment, a separate recovery circuit is coupled to each of the true output line and the complement output line of the memory cell.

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