G - Physics – 11 – C
Patent
G - Physics
11
C
354/239
G11C 7/00 (2006.01) G06F 7/78 (2006.01) G06F 12/02 (2006.01) H04Q 11/08 (2006.01)
Patent
CA 1188425
Abstract of the Disclosure In an information memory device of the type wherein information are sequentially stored in cells of a memory cell array and read out from the cells according to address informations, there are provided an internal address information generator for generating an internal address information, an address information selector for selecting either one of the internal address information and an external address information supplied from outside to form an address information, and an information memory circuit for storing a memory information at an position designated by the address information and for reading out the information stored in the designed position. The memory device of this invention can operate at a higher speed than a prior art memory device without providing a margin for the cycle time, and can readily be fabricated as an LS?.
404796
Miyahara Norio
Nikaido Tadanobu
Tawara Kanji
Macrae & Co.
Nippon Telegraph & Telephone Public Corporation
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