Information storage devices

Details Information storage devices Information storage devices

G - Physics

11

C

352/82.2

G11C 11/40 (2006.01)

Patent

CA 1074446

INFORMATION STORAGE DEVICES Abstract of the Disclosure The specification describes devices based on the recog- nition that minority charge carriers within a semiconductor can be used to represent information. Storage sites are provided by depletion regions formed along the semiconductor surface. The preferred structure is an array of metal electrodes on an insulat- ing layer, each electrode comprising an MIS device. A quantum of charge carriers, representing an information bit, is generated within the semiconductor. This quantum can be translated along the semiconductor by successively biasing a row of electrodes. The depletion region effectively "moves" through the semiconductor sweeping the minority carriers with it. The quantum can be de- tected by a simple capacitive couple, e.g., a floating gate FET.

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